Sourov Mazum “Simulation of A 2d P-N Junction in Silicon Thin Film Incorporating Quantum Transport For Carriers”Der
Basak, Munna Kumar
Joarder, Md. Al-Amin
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Silicon nanostructures have recently been a subject of interest demonstrating optical properties like luminescence. The Scientific community predicts quantum effects to be the predominant cause for such optical properties of silicon nanostructures. With this view as a motive, a simulation model of a 2D thin film quantum confined 2D p-n junction in silicon is developed in this work. A thin film silicon layer is considered in the regime of strong confinement. A p-n junction in such a film is considered so that the carriers are confined in thickness dimension while they are quantum mechanically transported along the device length. The transverse dimension in considered infinitely wide for plane wave approximation. For device simulation, after a careful study of various schemes to incorporate quantum effects, it was decided to use self-consistent Schrodinger-Poisson method. The simulation is done in MATLAB. For solution, instead of winger function or Green’s function, a more direct wave-function perspective is taken. First the equilibrium condition was simulated and then extension under externally applied voltage was carried out.