Now showing items 1-1 of 1

  • IMPACT IONIZATION DEPENDENCE OF HOLE TRAPPING PHENOMENA IN HEMTS 

    Zaman, Saif; Parker, Anthony (Daffodil International University, 2007-07-01)
    Impact ionization effects on hole trapping phenomena In high electron mobility transistor (HEMT) is investigated. For the purpose, measurement and a trap model simulation was done for two test devices. Measured and ...